At the Flash Memory Summit in August, there was a non-Flash session dealing with new memory technologies. It covered both RRAM and MRAM also known as Resistive RAM and Magnetic RAM technologies.
The Magnetic RAM (MRAM) arena also presented an technology update. The updates were from Avalanche Tech, Corcus, Everspin, MagSil and new startup Spin Transfer Technology. Avalanche Tech lead things off with an update of their 3rd Generation MRAM product which is a spin programable memory. The structure is best fit att addressing the SLC NOR and embedded SLC marketplace since it has a fast switching time (under 1ns) and is 3D stack-able to approach the high densities. The product can also be configured to DRAM type applications, which make it a good universal memory product for both the controller interface and product store of Enterprise class SSDs.
Crocus discussed some of the details on their new JDP with a Russian Nanoelectronics Corp which will be investing $300M to bring up a 12″ fab for the technology. The technology is base on an MLU concept (Magnetic Logic Unit) block that has it’s memory element from a TAS (Thermaly Assisted Switching) technology. The MLU implements a “native XOR” function in the cell design. The new strucutre is a self differential cell that supports high temperature operation and assembly (200C operation). The Crocus designs are applicable for NAND replacement, MLC applications, and both CAM/TCAM uses.
MagSil, a seven year old fabless startup gave an overview of thier technology which has been designed in 180nm and is extensible to 18nm without physics changes. They have been concentrating on solving the field issues related to the switching of magnetic films and have now developed solutions that are compatible with both Copper (Cu) and Aluminum (Al) interconnect solutions. They are expecting sample parts to be available in the 2013 time frame.
A new entry to the MRAM arena is Spin Transfer Technology (STT) which described an Orthoganal Spin Transfer (OST) technology. This type of MRAM has a structured, deterministic switching torque. This characteristic can be used to drive for instant on-instant off memory applications for the mobile marketplace. The technology, tested to the block level so far, has a 99% probability of <1ns switching between states.
The last update was from Everspin, which is the only company that is commercially shipping MRAM products to applications. Their customers include Airbus and BMW, and theiy have shipped 3M pcs to date. Thier fab light model includes thier BEOL fab for the MRAM using base layers built by commercial CMOS foundry. They currently have over 70 product SKUs and their main use is in SPI SRAM replacement. The durability of the product is proven by the application from Airbus which is the memory for the blackbox.
At the Flash Memory Summit in August, there was a non-Flash session dealing with new memory technologies. It covered both RRAM and MRAM also known as Resistive RAM and Magnetic RAM technologies.
The Magnetic RAM (MRAM) arena also presented an technology update. The updates were from Avalanche Tech, Corcus, Everspin, MagSil and new startup Spin Transfer Technology. Avalanche Tech lead things off with an update of their 3rd Generation MRAM product which is a spin programable memory. The structure is best fit att addressing the SLC NOR and embedded SLC marketplace since it has a fast switching time (under 1ns) and is 3D stack-able to approach the high densities. The product can also be configured to DRAM type applications, which make it a good universal memory product for both the controller interface and product store of Enterprise class SSDs.
Crocus discussed some of the details on their new JDP with a Russian Nanoelectronics Corp which will be investing $300M to bring up a 12″ fab for the technology. The technology is base on an MLU concept (Magnetic Logic Unit) block that has it’s memory element from a TAS (Thermaly Assisted Switching) technology. The MLU implements a “native XOR” function in the cell design. The new strucutre is a self differential cell that supports high temperature operation and assembly (200C operation). The Crocus designs are applicable for NAND replacement, MLC applications, and both CAM/TCAM uses.
MagSil, a seven year old fabless startup gave an overview of thier technology which has been designed in 180nm and is extensible to 18nm without physics changes. They have been concentrating on solving the field issues related to the switching of magnetic films and have now developed solutions that are compatible with both Copper (Cu) and Aluminum (Al) interconnect solutions. They are expecting sample parts to be available in the 2013 time frame.
A new entry to the MRAM arena is Spin Transfer Technology (STT) which described an Orthoganal Spin Transfer (OST) technology. This type of MRAM has a structured, deterministic switching torque. This characteristic can be used to drive for instant on-instant off memory applications for the mobile marketplace. The technology, tested to the block level so far, has a 99% probability of <1ns switching between states.
The last update was from Everspin, which is the only company that is commercially shipping MRAM products to applications. Their customers include Airbus and BMW, and theiy have shipped 3M pcs to date. Thier fab light model includes thier BEOL fab for the MRAM using base layers built by commercial CMOS foundry. They currently have over 70 product SKUs and their main use is in SPI SRAM replacement. The durability of the product is proven by the application from Airbus which is the memory for the blackbox.
PC